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| BAV70W SILICON EPITAXIAL PLANAR SWITCHING DIODE Features * Fast switching diode * Ultra small surface mount package 1 3 2 Marking Code: A4 Absolute Maximum Ratings (Ta = 25 OC) Parameter Non-Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current Power Dissipation Junction Temperature Storage Temperature Range at t = 1 s at t = 1 ms at t = 1 s Single diode loaded Double diode loaded Symbol VRM VR IF IFRM IFSM Ptot TJ Ts Value 100 75 175 100 500 4 1 0.5 200 150 - 65 to + 150 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 A Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Leakage Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC Diode Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 10 mA, Irr = 0.1 IR, RL = 100 Symbol VBR(R) Min. 75 Max. 0.715 0.855 1 1.25 30 2.5 60 100 2 4 Unit V VF V IR nA A A A pF ns Ctot trr SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/05/2007 BAV70W SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/05/2007 |
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